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PMEG2015EA115 NXP USA Inc.
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Description: DIODE SCHOTTKY 20V 1.5A SOD323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 50 µA @ 15 V
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Технічний опис PMEG2015EA115 NXP USA Inc.
Description: DIODE SCHOTTKY 20V 1.5A SOD323, Packaging: Bulk, Package / Case: SC-76, SOD-323, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 25pF @ 5V, 1MHz, Current - Average Rectified (Io): 1.5A, Supplier Device Package: SOD-323, Operating Temperature - Junction: -65°C ~ 125°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 20 V, Voltage - Forward (Vf) (Max) @ If: 660 mV @ 1.5 A, Current - Reverse Leakage @ Vr: 50 µA @ 15 V.
Інші пропозиції PMEG2015EA115
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PMEG2015EA115 | Виробник : NXP Semiconductors |
![]() Packaging: Bulk Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 25pF @ 5V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: SOD-323 Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 1.5 A Current - Reverse Leakage @ Vr: 50 µA @ 15 V |
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