PMEG200G10ELR-QX Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: DIODE GEN PURP 200V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 29pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 nA @ 200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 29pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 nA @ 200 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 7.26 грн |
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Технічний опис PMEG200G10ELR-QX Nexperia USA Inc.
Description: DIODE GEN PURP 200V 1A SOD123W, Packaging: Tape & Reel (TR), Package / Case: SOD-123W, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 34 ns, Technology: SiGe (Silicon Germanium), Capacitance @ Vr, F: 29pF @ 1V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: SOD-123W, Operating Temperature - Junction: 175°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 880 mV @ 1 A, Current - Reverse Leakage @ Vr: 30 nA @ 200 V, Qualification: AEC-Q101.
Інші пропозиції PMEG200G10ELR-QX за ціною від 7.13 грн до 27.14 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
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PMEG200G10ELR-QX | Виробник : Nexperia USA Inc. |
Description: DIODE GEN PURP 200V 1A SOD123W Packaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 34 ns Technology: SiGe (Silicon Germanium) Capacitance @ Vr, F: 29pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 1 A Current - Reverse Leakage @ Vr: 30 nA @ 200 V Qualification: AEC-Q101 |
на замовлення 5244 шт: термін постачання 21-31 дні (днів) |
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PMEG200G10ELR-QX | Виробник : NEXPERIA | Diode Switching SiGe 1.4A Automotive 2-Pin CFP3 T/R |
товар відсутній |
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PMEG200G10ELR-QX | Виробник : Nexperia | Rectifiers PMEG200G10ELR-Q/SOD123W/SOD2 |
товар відсутній |