PMDXB600UNEZ Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET 2N-CH 20V 0.6A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 265mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA
Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1010B-6
Part Status: Active
на замовлення 13515 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 25.63 грн |
| 17+ | 17.28 грн |
| 100+ | 8.73 грн |
| 500+ | 6.69 грн |
| 1000+ | 4.96 грн |
| 2000+ | 4.17 грн |
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Технічний опис PMDXB600UNEZ Nexperia USA Inc.
Description: MOSFET 2N-CH 20V 0.6A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-XFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 265mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 600mA, Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V, Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: DFN1010B-6, Part Status: Active.
Інші пропозиції PMDXB600UNEZ за ціною від 3.21 грн до 34.07 грн
| Фото | Назва | Виробник | Інформація |
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PMDXB600UNEZ | Виробник : Nexperia USA Inc. |
Description: MOSFET 2N-CH 20V 0.6A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 265mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 600mA Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN1010B-6 Part Status: Active |
на замовлення 13515 шт: термін постачання 21-31 дні (днів) |
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PMDXB600UNEZ | Виробник : Nexperia |
MOSFET PMDXB600UNE/SOT1216/DFN1010B-6 |
на замовлення 5411 шт: термін постачання 21-30 дні (днів) |
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PMDXB600UNEZ | Виробник : NEXPERIA |
Trans MOSFET N-CH 20V 0.6A 6-Pin DFN-B EP T/R |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| PMDXB600UNEZ | Виробник : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 400mA; Idm: 2.5A Type of transistor: N-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.4A Pulsed drain current: 2.5A Case: DFN1010B-6; SOT1216 Gate-source voltage: ±8V On-state resistance: 1Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5000 шт |
товар відсутній |
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PMDXB600UNEZ | Виробник : Nexperia USA Inc. |
Description: MOSFET 2N-CH 20V 0.6A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 265mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 600mA Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN1010B-6 Part Status: Active |
товар відсутній |
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| PMDXB600UNEZ | Виробник : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 400mA; Idm: 2.5A Type of transistor: N-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.4A Pulsed drain current: 2.5A Case: DFN1010B-6; SOT1216 Gate-source voltage: ±8V On-state resistance: 1Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |