PMDPB55XP,115 Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET 2P-CH 20V 3.4A 6HUSON
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Part Status: Active
Description: MOSFET 2P-CH 20V 3.4A 6HUSON
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Part Status: Active
на замовлення 1741 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
9+ | 33.92 грн |
11+ | 27.95 грн |
100+ | 19.4 грн |
500+ | 14.22 грн |
1000+ | 11.56 грн |
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Технічний опис PMDPB55XP,115 Nexperia USA Inc.
Description: NEXPERIA - PMDPB55XP,115 - Dual-MOSFET, p-Kanal, 20 V, 20 V, 4.5 A, 4.5 A, 0.055 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 4.5A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 20V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 4.5A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.055ohm, Verlustleistung, p-Kanal: 490mW, Drain-Source-Spannung Vds, n-Kanal: 20V, euEccn: NLR, Bauform - Transistor: SOT-1118, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.055ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: p-Kanal, Verlustleistung, n-Kanal: 490mW, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (23-Jan-2024).
Інші пропозиції PMDPB55XP,115 за ціною від 8.91 грн до 35.96 грн
Фото | Назва | Виробник | Інформація |
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PMDPB55XP,115 | Виробник : Nexperia | MOSFETs PMDPB55XP/SOT1118/HUSON6 |
на замовлення 13942 шт: термін постачання 21-30 дні (днів) |
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PMDPB55XP,115 | Виробник : NEXPERIA |
Description: NEXPERIA - PMDPB55XP,115 - Dual-MOSFET, p-Kanal, 20 V, 20 V, 4.5 A, 4.5 A, 0.055 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 4.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 4.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.055ohm Verlustleistung, p-Kanal: 490mW Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: SOT-1118 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.055ohm productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 490mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) |
на замовлення 5193 шт: термін постачання 21-31 дні (днів) |
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PMDPB55XP,115 | Виробник : NEXPERIA |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -2.2A; Idm: -14A Type of transistor: P-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.2A Pulsed drain current: -14A Case: DFN2020-6; HUSON6; SOT1118 Gate-source voltage: ±12V On-state resistance: 99mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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PMDPB55XP,115 | Виробник : Nexperia USA Inc. |
Description: MOSFET 2P-CH 20V 3.4A 6HUSON Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 490mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.4A Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 3.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 6-HUSON (2x2) Part Status: Active |
товар відсутній |
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PMDPB55XP,115 | Виробник : NEXPERIA |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -2.2A; Idm: -14A Type of transistor: P-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.2A Pulsed drain current: -14A Case: DFN2020-6; HUSON6; SOT1118 Gate-source voltage: ±12V On-state resistance: 99mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |