на замовлення 3000 шт:
термін постачання 77-86 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 38.87 грн |
| 10+ | 32.57 грн |
| 100+ | 19.68 грн |
| 500+ | 15.39 грн |
| 1000+ | 12.72 грн |
| 3000+ | 10.75 грн |
| 6000+ | 10.54 грн |
Відгуки про товар
Написати відгук
Технічний опис PMCPB5530XAX Nexperia
Description: PMCPB5530XA/SOT1118/HUSON6, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 490mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.6A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 10V, 785pF @ 10V, Rds On (Max) @ Id, Vgs: 34mOhm @ 4.5A, 4.5V, 66mOhm @ 3.6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V, 13nC @ 4.5V, Supplier Device Package: 6-HUSON (2x2), Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції PMCPB5530XAX
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
PMCPB5530XAX | Виробник : Nexperia USA Inc. |
 Description: PMCPB5530XA/SOT1118/HUSON6Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 490mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 10V, 785pF @ 10V Rds On (Max) @ Id, Vgs: 34mOhm @ 4.5A, 4.5V, 66mOhm @ 3.6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V, 13nC @ 4.5V Supplier Device Package: 6-HUSON (2x2) Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
|
|
|
PMCPB5530XAX | Виробник : Nexperia USA Inc. |
Description: PMCPB5530XA/SOT1118/HUSON6 Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 490mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 10V, 785pF @ 10V Rds On (Max) @ Id, Vgs: 34mOhm @ 4.5A, 4.5V, 66mOhm @ 3.6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V, 13nC @ 4.5V Supplier Device Package: 6-HUSON (2x2) Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |