на замовлення 1856 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 18.13 грн |
| 29+ | 11.14 грн |
| 100+ | 8.01 грн |
| 9000+ | 6.9 грн |
| 45000+ | 5.51 грн |
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Технічний опис PMCM4402UPEZ Nexperia
Description: MOSFET P-CH 20V 4WLCSP, Packaging: Tape & Reel (TR), Package / Case: 4-XFBGA, WLCSP, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A (Tj), Power Dissipation (Max): 400mW, Supplier Device Package: 4-WLCSP (0.78x0.78), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V.
Інші пропозиції PMCM4402UPEZ за ціною від 6.85 грн до 27.89 грн
| Фото | Назва | Виробник | Інформація |
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PMCM4402UPEZ | Виробник : Nexperia USA Inc. |
 Description: MOSFET P-CH 20V 4WLCSPPackaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Tj) Power Dissipation (Max): 400mW Supplier Device Package: 4-WLCSP (0.78x0.78) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V |
на замовлення 7310 шт: термін постачання 21-31 дні (днів) |
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PMCM4402UPEZ | Виробник : NEXPERIA |
Trans MOSFET P-CH 20V 3.3A 4-Pin WLCSP T/R |
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| PMCM4402UPEZ | Виробник : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.1A; Idm: -13A Kind of package: reel; tape Drain-source voltage: -20V Drain current: -2.1A On-state resistance: 114mΩ Type of transistor: P-MOSFET Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 10nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -13A Mounting: SMD Case: WLCSP4 кількість в упаковці: 9000 шт |
товар відсутній |
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PMCM4402UPEZ | Виробник : Nexperia USA Inc. |
Description: MOSFET P-CH 20V 4WLCSP Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Tj) Power Dissipation (Max): 400mW Supplier Device Package: 4-WLCSP (0.78x0.78) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V |
товар відсутній |
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| PMCM4402UPEZ | Виробник : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.1A; Idm: -13A Kind of package: reel; tape Drain-source voltage: -20V Drain current: -2.1A On-state resistance: 114mΩ Type of transistor: P-MOSFET Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 10nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -13A Mounting: SMD Case: WLCSP4 |
товар відсутній |