PMCM4401UNEZ Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 20V 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tj)
Power Dissipation (Max): 400mW
Supplier Device Package: 4-WLCSP (0.78x0.78)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Description: MOSFET N-CH 20V 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tj)
Power Dissipation (Max): 400mW
Supplier Device Package: 4-WLCSP (0.78x0.78)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9000+ | 7.2 грн |
| 27000+ | 6.83 грн |
Відгуки про товар
Написати відгук
Технічний опис PMCM4401UNEZ Nexperia USA Inc.
Description: MOSFET N-CH 20V 4WLCSP, Packaging: Tape & Reel (TR), Package / Case: 4-XFBGA, WLCSP, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.4A (Tj), Power Dissipation (Max): 400mW, Supplier Device Package: 4-WLCSP (0.78x0.78), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V.
Інші пропозиції PMCM4401UNEZ за ціною від 6.34 грн до 31.79 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
PMCM4401UNEZ | Виробник : NEXPERIA |
 Description: NEXPERIA - PMCM4401UNEZ - MISCELLANEOUS MOSFETStariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
на замовлення 139829 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
PMCM4401UNEZ | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 20V 4WLCSP Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Tj) Power Dissipation (Max): 400mW Supplier Device Package: 4-WLCSP (0.78x0.78) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V |
на замовлення 46160 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
PMCM4401UNEZ | Виробник : Nexperia |
MOSFET PMCM4401UNE/NAX000/NONE |
на замовлення 78945 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
| PMCM4401UNEZ | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 2.7A; Idm: 17A; WLCSP4 Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 9nC Case: WLCSP4 Technology: Trench Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 17A Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 71mΩ Drain current: 2.7A Drain-source voltage: 20V кількість в упаковці: 9000 шт |
товар відсутній |
||||||||||||||||||
| PMCM4401UNEZ | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 2.7A; Idm: 17A; WLCSP4 Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 9nC Case: WLCSP4 Technology: Trench Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 17A Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 71mΩ Drain current: 2.7A Drain-source voltage: 20V |
товар відсутній |