PJQ4606_R1_00001 Panjit International Inc.
Виробник: Panjit International Inc.Description: MOSFET N/P-CH 30V 7.6A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 18W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 23A (Tc), 6.7A (Ta), 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 429pF @ 25V, 846pF @ 15V
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V, 7.8nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3030B-8
Part Status: Not For New Designs
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Технічний опис PJQ4606_R1_00001 Panjit International Inc.
Description: MOSFET N/P-CH 30V 7.6A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), 18W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 23A (Tc), 6.7A (Ta), 20A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 429pF @ 25V, 846pF @ 15V, Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V, 7.8nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN3030B-8, Part Status: Not For New Designs.
Інші пропозиції PJQ4606_R1_00001
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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PJQ4606_R1_00001 | Виробник : Panjit |
MOSFETs 30V Complementary Enhancement Mode MOSFET |
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PJQ4606-R1-00001 | Виробник : Panjit | MOSFETs |
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