PJQ2410_R1_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: DFN2020B-6L, MOSFET
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020B-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Description: DFN2020B-6L, MOSFET
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020B-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
на замовлення 2784 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
9+ | 34.97 грн |
12+ | 26.06 грн |
100+ | 15.59 грн |
500+ | 13.55 грн |
1000+ | 9.22 грн |
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Технічний опис PJQ2410_R1_00001 Panjit International Inc.
Description: DFN2020B-6L, MOSFET, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN2020B-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V.
Інші пропозиції PJQ2410_R1_00001 за ціною від 7.38 грн до 38.13 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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PJQ2410_R1_00001 | Виробник : Panjit | MOSFET 30V N-Channel Enhancement Mode MOSFET |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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PJQ2410_R1_00001 | Виробник : Panjit International Inc. |
Description: DFN2020B-6L, MOSFET Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020B-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V |
товар відсутній |