PJQ2405_R1_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 20V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7.2A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020B-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1785 pF @ 10 V
Description: 20V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7.2A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020B-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1785 pF @ 10 V
на замовлення 2300 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
8+ | 41.06 грн |
10+ | 34.34 грн |
100+ | 23.79 грн |
500+ | 18.65 грн |
1000+ | 15.87 грн |
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Технічний опис PJQ2405_R1_00001 Panjit International Inc.
Description: 20V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), Rds On (Max) @ Id, Vgs: 32mOhm @ 7.2A, 4.5V, Power Dissipation (Max): 2.8W (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: DFN2020B-6, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1785 pF @ 10 V.
Інші пропозиції PJQ2405_R1_00001 за ціною від 13.71 грн до 45.02 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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PJQ2405_R1_00001 | Виробник : Panjit | MOSFET 20V P-Channel Enhancement Mode MOSFET |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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PJQ2405_R1_00001 | Виробник : Panjit International Inc. |
Description: 20V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 7.2A, 4.5V Power Dissipation (Max): 2.8W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: DFN2020B-6 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1785 pF @ 10 V |
товар відсутній |
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PJQ2405-R1-00001 | Виробник : Panjit | MOSFET DFN2020B-6L/MOS/NFET-20FIMP |
товар відсутній |