PJE8438_R1_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
на замовлення 2460 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
11+ | 29.65 грн |
15+ | 20.28 грн |
100+ | 10.24 грн |
500+ | 8.52 грн |
1000+ | 6.63 грн |
2000+ | 5.93 грн |
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Технічний опис PJE8438_R1_00001 Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: SOT-523, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 360mA (Ta), Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V, Power Dissipation (Max): 300mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-523, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V.
Інші пропозиції PJE8438_R1_00001 за ціною від 4.99 грн до 32.8 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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PJE8438_R1_00001 | Виробник : Panjit | MOSFET 50V N-Channel Enhancement Mode MOSFETESD Protected |
на замовлення 2315 шт: термін постачання 21-30 дні (днів) |
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PJE8438_R1_00001 | Виробник : Panjit International Inc. |
Description: 50V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V |
товар відсутній |
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PJE8438-R1-00001 | Виробник : Panjit | MOSFET SOT-523/MOS/SOT/NFET-50TBMN |
товар відсутній |