PJE8403_R1_00001 Panjit International Inc.
Виробник: Panjit International Inc.Description: SOT-523, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 600mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523 Flat Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 151 pF @ 10 V
на замовлення 44000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 6.72 грн |
| 8000+ | 6.33 грн |
| 12000+ | 5.61 грн |
| 28000+ | 5.19 грн |
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Технічний опис PJE8403_R1_00001 Panjit International Inc.
Description: SOT-523, MOSFET, Packaging: Tape & Reel (TR), Package / Case: SC-89, SOT-490, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 600mA (Ta), Rds On (Max) @ Id, Vgs: 340mOhm @ 600mA, 4.5V, Power Dissipation (Max): 300mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-523 Flat Leads, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 151 pF @ 10 V.
Інші пропозиції PJE8403_R1_00001 за ціною від 4.83 грн до 30.86 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
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PJE8403_R1_00001 | Виробник : PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -600mA; Idm: -2.4A; 300mW Kind of package: reel; tape Drain-source voltage: -20V Drain current: -0.6A On-state resistance: 0.6Ω Type of transistor: P-MOSFET Power dissipation: 0.3W Polarisation: unipolar Gate charge: 2.2nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -2.4A Mounting: SMD Case: SOT523 |
на замовлення 3995 шт: термін постачання 21-30 дні (днів) |
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PJE8403_R1_00001 | Виробник : PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -600mA; Idm: -2.4A; 300mW Kind of package: reel; tape Drain-source voltage: -20V Drain current: -0.6A On-state resistance: 0.6Ω Type of transistor: P-MOSFET Power dissipation: 0.3W Polarisation: unipolar Gate charge: 2.2nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -2.4A Mounting: SMD Case: SOT523 кількість в упаковці: 5 шт |
на замовлення 3995 шт: термін постачання 14-21 дні (днів) |
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PJE8403_R1_00001 | Виробник : Panjit International Inc. |
Description: SOT-523, MOSFET Packaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Rds On (Max) @ Id, Vgs: 340mOhm @ 600mA, 4.5V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Flat Leads Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 151 pF @ 10 V |
на замовлення 49372 шт: термін постачання 21-31 дні (днів) |
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PJE8403_R1_00001 | Виробник : Panjit |
MOSFET 20V P-Channel Enhancement Mode MOSFETESD Protected |
товар відсутній |