PJD16P06A_L2_00001 PanJit Semiconductor
Виробник: PanJit SemiconductorCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -16A; Idm: -64A; 2W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -16A
Pulsed drain current: -64A
Power dissipation: 2W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 22nC
Kind of channel: enhanced
на замовлення 12000 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 40 грн |
| 12+ | 33.13 грн |
| 25+ | 25.78 грн |
| 48+ | 18.13 грн |
| 132+ | 17.16 грн |
| 3000+ | 16.57 грн |
| 12000+ | 16.42 грн |
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Технічний опис PJD16P06A_L2_00001 PanJit Semiconductor
Description: 60V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc), Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V, Power Dissipation (Max): 2W (Ta), 25W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V.
Інші пропозиції PJD16P06A_L2_00001 за ціною від 13.91 грн до 48 грн
| Фото | Назва | Виробник | Інформація |
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PJD16P06A_L2_00001 | Виробник : Panjit |
MOSFET 60V P-Channel Enhancement Mode MOSFET |
на замовлення 17328 шт: термін постачання 21-30 дні (днів) |
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PJD16P06A_L2_00001 | Виробник : PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -16A; Idm: -64A; 2W; TO252AA Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -16A Pulsed drain current: -64A Power dissipation: 2W Case: TO252AA Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Gate charge: 22nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 12000 шт: термін постачання 14-21 дні (днів) |
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PJD16P06A_L2_00001 | Виробник : Panjit International Inc. |
Description: 60V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V Power Dissipation (Max): 2W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V |
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PJD16P06A_L2_00001 | Виробник : Panjit International Inc. |
Description: 60V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V Power Dissipation (Max): 2W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V |
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PJD16P06A-L2-00001 | Виробник : Panjit |
MOSFET |
товар відсутній |