на замовлення 3957 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3+ | 115.17 грн |
10+ | 91.14 грн |
100+ | 64.66 грн |
250+ | 62.36 грн |
500+ | 54.64 грн |
1000+ | 44.49 грн |
2500+ | 44.42 грн |
Відгуки про товар
Написати відгук
Технічний опис PHP18NQ10T,127 Nexperia
Description: MOSFET N-CH 100V 18A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 9A, 10V, Power Dissipation (Max): 79W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 25 V.
Інші пропозиції PHP18NQ10T,127
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
PHP18NQ10T,127 | Виробник : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 72A; 79W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 13A Pulsed drain current: 72A Power dissipation: 79W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 243mΩ Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
||
PHP18NQ10T,127 | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 100V 18A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 9A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 25 V |
товар відсутній |
||
PHP18NQ10T,127 | Виробник : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 72A; 79W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 13A Pulsed drain current: 72A Power dissipation: 79W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 243mΩ Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |