Технічний опис PHK04P02T,518 NEXPERIA
Description: MOSFET P-CH 16V 4.66A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.66A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 4.5V, Power Dissipation (Max): 5W (Tc), Vgs(th) (Max) @ Id: 600mV @ 1mA (Typ), Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 16 V, Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 528 pF @ 12.8 V.
Інші пропозиції PHK04P02T,518
Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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PHK04P02T,518 | Виробник : Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.66A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 4.5V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 600mV @ 1mA (Typ) Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 16 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 528 pF @ 12.8 V |
товар відсутній |
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PHK04P02T,518 | Виробник : Nexperia |
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товар відсутній |