Технічний опис PH5525L,115 NXP Semiconductors
Description: MOSFET N-CH 25V 81.7A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 81.7A (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 2.15V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 16.6, Input Capacitance (Ciss) (Max) @ Vds: 2150, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 12.
Інші пропозиції PH5525L,115
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PH5525L,115 | Виробник : NXP USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 81.7A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 2.15V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 16.6 Input Capacitance (Ciss) (Max) @ Vds: 2150 Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 12 |
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PH5525L,115 | Виробник : NXP Semiconductors |
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