на замовлення 3092 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 24.23 грн |
| 20+ | 16.51 грн |
| 100+ | 9.06 грн |
| 1000+ | 4.11 грн |
| 5000+ | 3.28 грн |
| 10000+ | 2.65 грн |
| 25000+ | 2.51 грн |
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Технічний опис PDTC114EQAZ Nexperia
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V, Supplier Device Package: DFN1010D-3, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 280 mW, Frequency - Transition: 230 MHz, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції PDTC114EQAZ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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PDTC114EQAZ | Виробник : NEXPERIA |
 Trans Digital BJT NPN 50V 100mA 440mW Automotive 3-Pin DFN-D EP T/R |
товар відсутній |
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| PDTC114EQAZ | Виробник : NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 440mW; DFN1010D-3,SOT1215 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.44W Case: DFN1010D-3; SOT1215 Current gain: 30 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ кількість в упаковці: 5 шт |
товар відсутній |
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PDTC114EQAZ | Виробник : Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: DFN1010D-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 280 mW Frequency - Transition: 230 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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| PDTC114EQAZ | Виробник : NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 440mW; DFN1010D-3,SOT1215 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.44W Case: DFN1010D-3; SOT1215 Current gain: 30 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
товар відсутній |