PCDP1665G1_T0_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: DIODE SIL CARB 650V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 618pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Description: DIODE SIL CARB 650V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 618pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 419.41 грн |
50+ | 319.85 грн |
100+ | 274.16 грн |
500+ | 228.7 грн |
1000+ | 195.82 грн |
2000+ | 184.39 грн |
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Технічний опис PCDP1665G1_T0_00001 Panjit International Inc.
Description: DIODE SIL CARB 650V 16A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 618pF @ 1V, 1MHz, Current - Average Rectified (Io): 16A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A, Current - Reverse Leakage @ Vr: 100 µA @ 650 V.
Інші пропозиції PCDP1665G1_T0_00001 за ціною від 192.06 грн до 459.89 грн
Фото | Назва | Виробник | Інформація |
Доступність |
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PCDP1665G1_T0_00001 | Виробник : Panjit | Schottky Diodes & Rectifiers 650V SiC Schottky Barrier Diode |
на замовлення 1827 шт: термін постачання 21-30 дні (днів) |
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PCDP1665G1_T0_00001 | Виробник : PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 136.4W; TO220AC Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 16A Max. load current: 72A Power dissipation: 136.4W Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 720A Max. forward voltage: 1.8V Leakage current: 0.1mA кількість в упаковці: 1 шт |
товар відсутній |
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PCDP1665G1_T0_00001 | Виробник : PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 136.4W; TO220AC Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 16A Max. load current: 72A Power dissipation: 136.4W Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 720A Max. forward voltage: 1.8V Leakage current: 0.1mA |
товар відсутній |