PCDP0465G1_T0_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: DIODE SIL CARB 650V 4A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 146pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE SIL CARB 650V 4A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 146pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
на замовлення 1996 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 182.83 грн |
10+ | 146.19 грн |
100+ | 116.32 грн |
500+ | 92.37 грн |
1000+ | 78.37 грн |
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Технічний опис PCDP0465G1_T0_00001 Panjit International Inc.
Description: DIODE SIL CARB 650V 4A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 146pF @ 1V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V.
Інші пропозиції PCDP0465G1_T0_00001 за ціною від 95.56 грн до 237.95 грн
Фото | Назва | Виробник | Інформація |
Доступність |
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PCDP0465G1_T0_00001 | Виробник : Panjit | Schottky Diodes & Rectifiers 650V SiC Schottky Barrier Diode |
на замовлення 1410 шт: термін постачання 21-30 дні (днів) |
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PCDP0465G1_T0_00001 | Виробник : PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 56W; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Max. load current: 20A Power dissipation: 56W Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 280A Max. forward voltage: 1.8V Leakage current: 40µA кількість в упаковці: 1 шт |
товар відсутній |
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PCDP0465G1_T0_00001 | Виробник : PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 56W; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Max. load current: 20A Power dissipation: 56W Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 280A Max. forward voltage: 1.8V Leakage current: 40µA |
товар відсутній |