PCDH40120CCGB_T0_00601 PanJit Semiconductor
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; 443W
Mounting: THT
Power dissipation: 443W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. load current: 100A
Max. forward voltage: 1.9V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 1.36kA
Leakage current: 0.1mA
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; 443W
Mounting: THT
Power dissipation: 443W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. load current: 100A
Max. forward voltage: 1.9V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 1.36kA
Leakage current: 0.1mA
кількість в упаковці: 1 шт
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Технічний опис PCDH40120CCGB_T0_00601 PanJit Semiconductor
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; 443W, Mounting: THT, Power dissipation: 443W, Kind of package: tube, Type of diode: Schottky rectifying, Technology: SiC, Case: TO247-3, Max. off-state voltage: 1.2kV, Max. load current: 100A, Max. forward voltage: 1.9V, Load current: 20A x2, Semiconductor structure: common cathode; double, Max. forward impulse current: 1.36kA, Leakage current: 0.1mA, кількість в упаковці: 1 шт.
Інші пропозиції PCDH40120CCGB_T0_00601
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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PCDH40120CCGB_T0_00601 | Виробник : Panjit |
 SiC Schottky Diodes 1200V SiC Schottky Barrier Diode |
товар відсутній |
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| PCDH40120CCGB_T0_00601 | Виробник : PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; 443W Mounting: THT Power dissipation: 443W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO247-3 Max. off-state voltage: 1.2kV Max. load current: 100A Max. forward voltage: 1.9V Load current: 20A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 1.36kA Leakage current: 0.1mA |
товар відсутній |