PCDF0865G1_T0_00601 Panjit International Inc.
Виробник: Panjit International Inc.Description: 650V/8A THROUGH HOLE SILICON CAR
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 352.78 грн |
| 50+ | 269.52 грн |
| 100+ | 231.01 грн |
| 500+ | 192.71 грн |
| 1000+ | 165.01 грн |
| 2000+ | 155.37 грн |
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Технічний опис PCDF0865G1_T0_00601 Panjit International Inc.
Description: 650V/8A THROUGH HOLE SILICON CAR, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Isolated Tab, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 300pF @ 1V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: ITO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A, Current - Reverse Leakage @ Vr: 60 µA @ 650 V.
Інші пропозиції PCDF0865G1_T0_00601
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| PCDF0865G1_T0_00601 | Виробник : PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA Kind of package: tube Mounting: THT Case: ITO220AC Leakage current: 60µA Max. forward impulse current: 0.48kA Power dissipation: 78.1W Semiconductor structure: single diode Type of diode: Schottky rectifying Load current: 8A Max. forward voltage: 1.8V Technology: SiC Max. load current: 28A Max. off-state voltage: 650V кількість в упаковці: 1 шт |
товар відсутній |
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PCDF0865G1_T0_00601 | Виробник : Panjit |
Schottky Diodes & Rectifiers 650V/8A Through Hole Silicon Carbide Schottky Barrier Diode |
товар відсутній |
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| PCDF0865G1_T0_00601 | Виробник : PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA Kind of package: tube Mounting: THT Case: ITO220AC Leakage current: 60µA Max. forward impulse current: 0.48kA Power dissipation: 78.1W Semiconductor structure: single diode Type of diode: Schottky rectifying Load current: 8A Max. forward voltage: 1.8V Technology: SiC Max. load current: 28A Max. off-state voltage: 650V |
товар відсутній |