PCDF0465G1_T0_00601 Panjit International Inc.
Виробник: Panjit International Inc.Description: 650V/4A THROUGH HOLE SILICON CAR
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 160pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 220.63 грн |
| 50+ | 168.6 грн |
| 100+ | 144.52 грн |
| 500+ | 120.55 грн |
| 1000+ | 103.22 грн |
| 2000+ | 97.19 грн |
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Технічний опис PCDF0465G1_T0_00601 Panjit International Inc.
Description: 650V/4A THROUGH HOLE SILICON CAR, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Isolated Tab, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 160pF @ 1V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: ITO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V.
Інші пропозиції PCDF0465G1_T0_00601 за ціною від 99.13 грн до 237.12 грн
| Фото | Назва | Виробник | Інформація |
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PCDF0465G1_T0_00601 | Виробник : Panjit |
SiC Schottky Diodes 650V/4A Through Hole Silicon Carbide Schottky Barrier Diode |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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| PCDF0465G1_T0_00601 | Виробник : PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; Ir: 40uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: ITO220AC Max. forward voltage: 1.8V Max. load current: 20A Max. forward impulse current: 360A Leakage current: 40µA Power dissipation: 53.6W Kind of package: tube кількість в упаковці: 1 шт |
товар відсутній |
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| PCDF0465G1_T0_00601 | Виробник : PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; Ir: 40uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: ITO220AC Max. forward voltage: 1.8V Max. load current: 20A Max. forward impulse current: 360A Leakage current: 40µA Power dissipation: 53.6W Kind of package: tube |
товар відсутній |