PCDE1065G1_R2_00001 PanJit Semiconductor
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO263; reel,tape
Kind of package: reel; tape
Max. off-state voltage: 650V
Max. load current: 44A
Max. forward voltage: 1.8V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 0.55kA
Leakage current: 70µA
Power dissipation: 102.7W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Case: TO263
кількість в упаковці: 800 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO263; reel,tape
Kind of package: reel; tape
Max. off-state voltage: 650V
Max. load current: 44A
Max. forward voltage: 1.8V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 0.55kA
Leakage current: 70µA
Power dissipation: 102.7W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Case: TO263
кількість в упаковці: 800 шт
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Технічний опис PCDE1065G1_R2_00001 PanJit Semiconductor
Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO263; reel,tape, Kind of package: reel; tape, Max. off-state voltage: 650V, Max. load current: 44A, Max. forward voltage: 1.8V, Load current: 10A, Semiconductor structure: single diode, Max. forward impulse current: 0.55kA, Leakage current: 70µA, Power dissipation: 102.7W, Type of diode: Schottky rectifying, Technology: SiC, Mounting: SMD, Case: TO263, кількість в упаковці: 800 шт.
Інші пропозиції PCDE1065G1_R2_00001
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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PCDE1065G1-R2-00001 | Виробник : Panjit | Schottky Diodes & Rectifiers TO-263/SIC/TO/SIC-100DWH |
товару немає в наявності |
||
PCDE1065G1_R2_00001 | Виробник : PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO263; reel,tape Kind of package: reel; tape Max. off-state voltage: 650V Max. load current: 44A Max. forward voltage: 1.8V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 0.55kA Leakage current: 70µA Power dissipation: 102.7W Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Case: TO263 |
товару немає в наявності |