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PCDE10120G1_R2_00001 PanJit Semiconductor


Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO263; reel,tape
Kind of package: reel; tape
Max. off-state voltage: 1.2kV
Max. load current: 76A
Max. forward voltage: 2V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 640A
Leakage current: 0.1mA
Power dissipation: 164.8W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Case: TO263
кількість в упаковці: 800 шт
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Технічний опис PCDE10120G1_R2_00001 PanJit Semiconductor

Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO263; reel,tape, Kind of package: reel; tape, Max. off-state voltage: 1.2kV, Max. load current: 76A, Max. forward voltage: 2V, Load current: 10A, Semiconductor structure: single diode, Max. forward impulse current: 640A, Leakage current: 0.1mA, Power dissipation: 164.8W, Type of diode: Schottky rectifying, Technology: SiC, Mounting: SMD, Case: TO263, кількість в упаковці: 800 шт.

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PCDE10120G1_R2_00001 Виробник : PanJit Semiconductor Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO263; reel,tape
Kind of package: reel; tape
Max. off-state voltage: 1.2kV
Max. load current: 76A
Max. forward voltage: 2V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 640A
Leakage current: 0.1mA
Power dissipation: 164.8W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Case: TO263
товар відсутній