P6SMB75CAHM4G TAIWAN SEMICONDUCTOR
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 75V; 6.1A; bidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Max. off-state voltage: 64.1V
Semiconductor structure: bidirectional
Max. forward impulse current: 6.1A
Breakdown voltage: 75V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Case: SMB
Tolerance: ±5%
кількість в упаковці: 1 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 75V; 6.1A; bidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Max. off-state voltage: 64.1V
Semiconductor structure: bidirectional
Max. forward impulse current: 6.1A
Breakdown voltage: 75V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Case: SMB
Tolerance: ±5%
кількість в упаковці: 1 шт
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Технічний опис P6SMB75CAHM4G TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes, Description: Diode: TVS; 600W; 75V; 6.1A; bidirectional; ±5%; SMB; reel,tape, Mounting: SMD, Max. off-state voltage: 64.1V, Semiconductor structure: bidirectional, Max. forward impulse current: 6.1A, Breakdown voltage: 75V, Leakage current: 1µA, Kind of package: reel; tape, Type of diode: TVS, Peak pulse power dissipation: 0.6kW, Case: SMB, Tolerance: ±5%, кількість в упаковці: 1 шт.
Інші пропозиції P6SMB75CAHM4G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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P6SMB75CAHM4G | Виробник : TAIWAN SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 75V; 6.1A; bidirectional; ±5%; SMB; reel,tape Mounting: SMD Max. off-state voltage: 64.1V Semiconductor structure: bidirectional Max. forward impulse current: 6.1A Breakdown voltage: 75V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Case: SMB Tolerance: ±5% |
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