P6SMB16A-E3/5B Vishay General Semiconductor
на замовлення 3200 шт:
термін постачання 21-30 дні (днів)
Відгуки про товар
Написати відгук
Технічний опис P6SMB16A-E3/5B Vishay General Semiconductor
Category: Unidirectional SMD transil diodes, Description: Diode: TVS; 600W; 16V; 26.7A; unidirectional; ±5%; SMB; reel,tape, Manufacturer series: P6SMB, Kind of package: reel; tape, Type of diode: TVS, Features of semiconductor devices: glass passivated, Technology: TransZorb®, Peak pulse power dissipation: 0.6kW, Mounting: SMD, Case: SMB, Tolerance: ±5%, Max. off-state voltage: 13.6V, Semiconductor structure: unidirectional, Max. forward impulse current: 26.7A, Breakdown voltage: 16V, Leakage current: 1µA, кількість в упаковці: 5 шт.
Інші пропозиції P6SMB16A-E3/5B
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
P6SMB16A-E3/5B | Виробник : VISHAY |
 Category: Unidirectional SMD transil diodesDescription: Diode: TVS; 600W; 16V; 26.7A; unidirectional; ±5%; SMB; reel,tape Manufacturer series: P6SMB Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: glass passivated Technology: TransZorb® Peak pulse power dissipation: 0.6kW Mounting: SMD Case: SMB Tolerance: ±5% Max. off-state voltage: 13.6V Semiconductor structure: unidirectional Max. forward impulse current: 26.7A Breakdown voltage: 16V Leakage current: 1µA кількість в упаковці: 5 шт |
товар відсутній |
|
;;2.jpg "P6SMB16A-E3/5B") |
P6SMB16A-E3/5B | Виробник : Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 13.6V 22.5V DO214AA |
товар відсутній |
|
|
|
P6SMB16A-E3/5B | Виробник : Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 13.6V 22.5V DO214AA |
товар відсутній |
|
|
|
P6SMB16A-E3/5B | Виробник : VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 16V; 26.7A; unidirectional; ±5%; SMB; reel,tape Manufacturer series: P6SMB Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: glass passivated Technology: TransZorb® Peak pulse power dissipation: 0.6kW Mounting: SMD Case: SMB Tolerance: ±5% Max. off-state voltage: 13.6V Semiconductor structure: unidirectional Max. forward impulse current: 26.7A Breakdown voltage: 16V Leakage current: 1µA |
товар відсутній |