Технічний опис P4SMA170A Littelfuse Inc.
Category: Unidirectional SMD transil diodes, Description: Diode: TVS; 400W; 170V; 1.8A; unidirectional; ±5%; SMA; reel,tape, Mounting: SMD, Tolerance: ±5%, Max. forward impulse current: 1.8A, Leakage current: 1µA, Case: SMA, Kind of package: reel; tape, Type of diode: TVS, Features of semiconductor devices: glass passivated, Peak pulse power dissipation: 0.4kW, Max. off-state voltage: 145V, Semiconductor structure: unidirectional, Breakdown voltage: 170V, кількість в упаковці: 1 шт.
Інші пропозиції P4SMA170A
Фото | Назва | Виробник | Інформація |
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P4SMA170A | Виробник : Littelfuse |
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на замовлення 2800 шт: термін постачання 21-30 дні (днів) |
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P4SMA170A | Виробник : LITTELFUSE |
![]() Description: Diode: TVS; 400W; 170V; 1.8A; unidirectional; ±5%; SMA; reel,tape Mounting: SMD Tolerance: ±5% Max. forward impulse current: 1.8A Leakage current: 1µA Case: SMA Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: glass passivated Peak pulse power dissipation: 0.4kW Max. off-state voltage: 145V Semiconductor structure: unidirectional Breakdown voltage: 170V кількість в упаковці: 1 шт |
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P4SMA170A | Виробник : Littelfuse |
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P4SMA170A | Виробник : YANGJIE TECHNOLOGY |
![]() Description: Diode: TVS; 400W; 170V; 1.7A; unidirectional; ±5%; SMA; reel,tape Mounting: SMD Tolerance: ±5% Max. forward impulse current: 1.7A Leakage current: 5µA Case: SMA Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: glass passivated Peak pulse power dissipation: 0.4kW Max. off-state voltage: 145V Semiconductor structure: unidirectional Breakdown voltage: 170V кількість в упаковці: 5 шт |
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P4SMA170A | Виробник : Littelfuse Inc. |
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P4SMA170A | Виробник : Bourns |
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P4SMA170A | Виробник : YANGJIE TECHNOLOGY |
![]() Description: Diode: TVS; 400W; 170V; 1.7A; unidirectional; ±5%; SMA; reel,tape Mounting: SMD Tolerance: ±5% Max. forward impulse current: 1.7A Leakage current: 5µA Case: SMA Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: glass passivated Peak pulse power dissipation: 0.4kW Max. off-state voltage: 145V Semiconductor structure: unidirectional Breakdown voltage: 170V |
товар відсутній |
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P4SMA170A | Виробник : LITTELFUSE |
![]() Description: Diode: TVS; 400W; 170V; 1.8A; unidirectional; ±5%; SMA; reel,tape Mounting: SMD Tolerance: ±5% Max. forward impulse current: 1.8A Leakage current: 1µA Case: SMA Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: glass passivated Peak pulse power dissipation: 0.4kW Max. off-state voltage: 145V Semiconductor structure: unidirectional Breakdown voltage: 170V |
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