Технічний опис P2000DL45X168APTHPSA1 Infineon Technologies
Description: PRESS PACK IGBT BG-P16826K-1, Packaging: Tray, Package / Case: DO-200AE, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2000A, NTC Thermistor: No, Supplier Device Package: BG-P16826K-1, IGBT Type: Trench, Part Status: Active, Current - Collector (Ic) (Max): 2000 A, Voltage - Collector Emitter Breakdown (Max): 4500 V, Current - Collector Cutoff (Max): 200 µA, Input Capacitance (Cies) @ Vce: 420 nF @ 25 V.
Інші пропозиції P2000DL45X168APTHPSA1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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P2000DL45X168APTHPSA1 | Виробник : Infineon Technologies |
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P2000DL45X168APTHPSA1 | Виробник : Infineon Technologies |
![]() Packaging: Tray Package / Case: DO-200AE Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2000A NTC Thermistor: No Supplier Device Package: BG-P16826K-1 IGBT Type: Trench Part Status: Active Current - Collector (Ic) (Max): 2000 A Voltage - Collector Emitter Breakdown (Max): 4500 V Current - Collector Cutoff (Max): 200 µA Input Capacitance (Cies) @ Vce: 420 nF @ 25 V |
товар відсутній |
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P2000DL45X168APTHPSA1 | Виробник : Infineon Technologies |
![]() |
товар відсутній |