NXH007F120M3F2PTHG onsemi
Виробник: onsemi
Description: 7M 1200V 40A M3S SIC FULL BRIDGE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 353W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 149A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9090pF @ 800V
Rds On (Max) @ Id, Vgs: 10mOhm @ 120A, 18V
Gate Charge (Qg) (Max) @ Vgs: 407nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.4V @ 60mA
Supplier Device Package: 34-PIM (56.7x42.5)
Description: 7M 1200V 40A M3S SIC FULL BRIDGE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 353W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 149A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9090pF @ 800V
Rds On (Max) @ Id, Vgs: 10mOhm @ 120A, 18V
Gate Charge (Qg) (Max) @ Vgs: 407nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.4V @ 60mA
Supplier Device Package: 34-PIM (56.7x42.5)
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 11155.8 грн |
| 20+ | 10061.46 грн |
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Технічний опис NXH007F120M3F2PTHG onsemi
Description: 7M 1200V 40A M3S SIC FULL BRIDGE, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 353W (Tj), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 149A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 9090pF @ 800V, Rds On (Max) @ Id, Vgs: 10mOhm @ 120A, 18V, Gate Charge (Qg) (Max) @ Vgs: 407nC @ 18V, FET Feature: Silicon Carbide (SiC), Vgs(th) (Max) @ Id: 4.4V @ 60mA, Supplier Device Package: 34-PIM (56.7x42.5).
Інші пропозиції NXH007F120M3F2PTHG за ціною від 9579.77 грн до 12696.83 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NXH007F120M3F2PTHG | Виробник : onsemi |
 Discrete Semiconductor Modules Silicon Carbide (SiC) Module - EliteSiC, 7 mohm SiC M3S MOSFET, 1200 V, 4-PACK Full Bridge Topology, F2 Package Silicon Carbide (SiC) Module ? EliteSiC, 7 mohm SiC M3S MOSFET, 1200 V, 4-PACK Full Bridge Topology, F2 Package |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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| NXH007F120M3F2PTHG | Виробник : ON Semiconductor |
SiliconCarbide Module MOSFET |
товар відсутній |