NVTFS016N06CTAG onsemi
на замовлення 6850 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
4+ | 102.98 грн |
10+ | 91.6 грн |
100+ | 61.43 грн |
500+ | 50.73 грн |
1000+ | 39.68 грн |
1500+ | 33.73 грн |
3000+ | 33.44 грн |
Відгуки про товар
Написати відгук
Технічний опис NVTFS016N06CTAG onsemi
Description: MOSFET N-CH 60V 8A/32A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 32A (Tc), Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V, Power Dissipation (Max): 2.5W (Ta), 36W (Tc), Vgs(th) (Max) @ Id: 4V @ 25µA, Supplier Device Package: 8-WDFN (3.3x3.3), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V, Qualification: AEC-Q101.
Інші пропозиції NVTFS016N06CTAG
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
NVTFS016N06CTAG | Виробник : ON Semiconductor | Single N Channel Power MOSFET |
товар відсутній |
||
NVTFS016N06CTAG | Виробник : onsemi |
Description: MOSFET N-CH 60V 8A/32A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V Power Dissipation (Max): 2.5W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 25µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V Qualification: AEC-Q101 |
товар відсутній |
||
NVTFS016N06CTAG | Виробник : onsemi |
Description: MOSFET N-CH 60V 8A/32A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V Power Dissipation (Max): 2.5W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 25µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |