NVMYS016N10MCLTWG onsemi
Виробник: onsemi
Description: PTNG 100V LL LFPAK4
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 10V
Power Dissipation (Max): 3.6W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 3V @ 64µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
Qualification: AEC-Q101
Description: PTNG 100V LL LFPAK4
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 10V
Power Dissipation (Max): 3.6W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 3V @ 64µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 39.7 грн |
6000+ | 36.8 грн |
15000+ | 35.65 грн |
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Технічний опис NVMYS016N10MCLTWG onsemi
Description: PTNG 100V LL LFPAK4, Packaging: Tape & Reel (TR), Package / Case: SOT-1023, 4-LFPAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 46A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 10V, Power Dissipation (Max): 3.6W (Ta), 64W (Tc), Vgs(th) (Max) @ Id: 3V @ 64µA, Supplier Device Package: LFPAK4 (5x6), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V, Qualification: AEC-Q101.
Інші пропозиції NVMYS016N10MCLTWG за ціною від 37.15 грн до 98.52 грн
Фото | Назва | Виробник | Інформація |
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NVMYS016N10MCLTWG | Виробник : onsemi |
Description: PTNG 100V LL LFPAK4 Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 10V Power Dissipation (Max): 3.6W (Ta), 64W (Tc) Vgs(th) (Max) @ Id: 3V @ 64µA Supplier Device Package: LFPAK4 (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V Qualification: AEC-Q101 |
на замовлення 17930 шт: термін постачання 21-31 дні (днів) |
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NVMYS016N10MCLTWG | Виробник : ON Semiconductor | NVMYS016N10MCLTWG |
товар відсутній |
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NVMYS016N10MCLTWG | Виробник : onsemi | MOSFETs MOSFET - Power, Single N-Channel 100 V, 14 mohm, 46 A |
товар відсутній |