NVMTS1D1N04CTXG onsemi
Виробник: onsemiDescription: T6 40V SL AIZU SINGLE NCH PQFN 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.8A (Ta), 277A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Power Dissipation (Max): 4.7W (Ta), 153W (Tc)
Vgs(th) (Max) @ Id: 4V @ 210µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5410 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис NVMTS1D1N04CTXG onsemi
Description: T6 40V SL AIZU SINGLE NCH PQFN 8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48.8A (Ta), 277A (Tc), Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V, Power Dissipation (Max): 4.7W (Ta), 153W (Tc), Vgs(th) (Max) @ Id: 4V @ 210µA, Supplier Device Package: 8-DFNW (8.3x8.4), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5410 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції NVMTS1D1N04CTXG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
|
|
NVMTS1D1N04CTXG | Виробник : onsemi |
Description: T6 40V SL AIZU SINGLE NCH PQFN 8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48.8A (Ta), 277A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V Power Dissipation (Max): 4.7W (Ta), 153W (Tc) Vgs(th) (Max) @ Id: 4V @ 210µA Supplier Device Package: 8-DFNW (8.3x8.4) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5410 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
|
| NVMTS1D1N04CTXG | Виробник : onsemi |
MOSFETs Power MOSFET 40V, 1.1 mohm, 277 A, Single N-Channel Power MOSFET 40V, 1.1 mohm, 277 A, Single N-Channel |
товар відсутній |