![NVMTS0D7N06CLTXG NVMTS0D7N06CLTXG](https://www.mouser.com/images/onsemiconductor/lrg/DFNW-8_case_507AP_DSL.jpg)
на замовлення 5095 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 754.4 грн |
10+ | 684.62 грн |
25+ | 593.21 грн |
100+ | 544.01 грн |
250+ | 528.55 грн |
500+ | 481.46 грн |
1000+ | 433.66 грн |
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Технічний опис NVMTS0D7N06CLTXG onsemi
Description: AFSM T6 60V LL NCH, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 62.2A (Ta), 477A (Tc), Rds On (Max) @ Id, Vgs: 0.68mOhm @ 50A, 10V, Power Dissipation (Max): 5W (Ta), 294.6W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-DFNW (8.3x8.4), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V.
Інші пропозиції NVMTS0D7N06CLTXG
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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NVMTS0D7N06CLTXG | Виробник : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62.2A (Ta), 477A (Tc) Rds On (Max) @ Id, Vgs: 0.68mOhm @ 50A, 10V Power Dissipation (Max): 5W (Ta), 294.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V |
товар відсутній |
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NVMTS0D7N06CLTXG | Виробник : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62.2A (Ta), 477A (Tc) Rds On (Max) @ Id, Vgs: 0.68mOhm @ 50A, 10V Power Dissipation (Max): 5W (Ta), 294.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V |
товар відсутній |