Продукція > ONSEMI > NVMTS0D4N04CLTXG
NVMTS0D4N04CLTXG

NVMTS0D4N04CLTXG onsemi

nvmts0d4n04cl-d.pdf Виробник: onsemi
Description: MOSFET N-CH 40V 553.8A 8DFNW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 553.8A (Tc)
Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V
Power Dissipation (Max): 5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 20600 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 90 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+715.42 грн
10+ 590.71 грн
Відгуки про товар
Написати відгук

Технічний опис NVMTS0D4N04CLTXG onsemi

Description: MOSFET N-CH 40V 553.8A 8DFNW, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 553.8A (Tc), Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V, Power Dissipation (Max): 5W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-DFNW (8.3x8.4), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 20600 pF @ 20 V, Grade: Automotive, Qualification: AEC-Q101.

Інші пропозиції NVMTS0D4N04CLTXG

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
NVMTS0D4N04CLTXG NVMTS0D4N04CLTXG Виробник : ON Semiconductor nvmts0d4n04cl-d.pdf Trans MOSFET N-CH 40V 79.8A Automotive 8-Pin DFNW EP T/R
товар відсутній
NVMTS0D4N04CLTXG NVMTS0D4N04CLTXG Виробник : onsemi nvmts0d4n04cl-d.pdf Description: MOSFET N-CH 40V 553.8A 8DFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 553.8A (Tc)
Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V
Power Dissipation (Max): 5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 20600 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
NVMTS0D4N04CLTXG NVMTS0D4N04CLTXG Виробник : onsemi NVMTS0D4N04CL_D-2319893.pdf MOSFET Single N-Channel Power MOSFET 40V, 553.8A, 0.4mohm
товар відсутній