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NVMJST1D4N06CLTXG

NVMJST1D4N06CLTXG onsemi


NVMJST1D4N06CL_D-3435960.pdf Виробник: onsemi
MOSFETs Single N-Channel Power MOSFET 60V, 198, 1.49 mohm on Top Cool Package
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Технічний опис NVMJST1D4N06CLTXG onsemi

Description: TRENCH 6 60V LFPAK 5X7, Packaging: Tape & Reel (TR), Package / Case: 10-PowerLSOP (0.209", 5.30mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 198A (Tc), Rds On (Max) @ Id, Vgs: 1.49mOhm @ 50A, 10V, Power Dissipation (Max): 5.3W (Ta), 116W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 10-TCPAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 92.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6555 pF @ 25 V, Qualification: AEC-Q101.

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NVMJST1D4N06CLTXG Виробник : ON Semiconductor nvmjst1d4n06cl-d.pdf TRENCH 6 60V LFPAK 5x7
товар відсутній
NVMJST1D4N06CLTXG NVMJST1D4N06CLTXG Виробник : onsemi Description: TRENCH 6 60V LFPAK 5X7
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 198A (Tc)
Rds On (Max) @ Id, Vgs: 1.49mOhm @ 50A, 10V
Power Dissipation (Max): 5.3W (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 10-TCPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 92.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6555 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
NVMJST1D4N06CLTXG NVMJST1D4N06CLTXG Виробник : onsemi Description: TRENCH 6 60V LFPAK 5X7
Packaging: Cut Tape (CT)
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 198A (Tc)
Rds On (Max) @ Id, Vgs: 1.49mOhm @ 50A, 10V
Power Dissipation (Max): 5.3W (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 10-TCPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 92.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6555 pF @ 25 V
Qualification: AEC-Q101
товар відсутній