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NVMJS1D4N06CLTWG

NVMJS1D4N06CLTWG onsemi

nvmjs1d4n06cl-d.pdf Виробник: onsemi
Description: MOSFET N-CH 60V 39A/262A 8LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 262A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 4W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 2V @ 280µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7430 pF @ 30 V
Qualification: AEC-Q101
на замовлення 2890 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+189.22 грн
10+ 153.32 грн
100+ 124.04 грн
500+ 103.47 грн
1000+ 88.6 грн
Мінімальне замовлення: 2
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Технічний опис NVMJS1D4N06CLTWG onsemi

Description: MOSFET N-CH 60V 39A/262A 8LFPAK, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 262A (Tc), Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V, Power Dissipation (Max): 4W (Ta), 180W (Tc), Vgs(th) (Max) @ Id: 2V @ 280µA, Supplier Device Package: 8-LFPAK, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7430 pF @ 30 V, Qualification: AEC-Q101.

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NVMJS1D4N06CLTWG NVMJS1D4N06CLTWG Виробник : ON Semiconductor nvmjs1d4n06cl-d.pdf Power MOSFET
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NVMJS1D4N06CLTWG NVMJS1D4N06CLTWG Виробник : onsemi nvmjs1d4n06cl-d.pdf Description: MOSFET N-CH 60V 39A/262A 8LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 262A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 4W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 2V @ 280µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7430 pF @ 30 V
Qualification: AEC-Q101
товар відсутній
NVMJS1D4N06CLTWG NVMJS1D4N06CLTWG Виробник : onsemi NVMJS1D4N06CL_D-2319872.pdf MOSFET T6 60V LL LFPAK
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