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NVMFWS0D7N04XM_D-3150573.pdf Виробник: onsemi
MOSFET 40V T10M IN S08FL PACKAGE
на замовлення 1500 шт:
термін постачання 497-506 дні (днів)
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100+ 116.1 грн
250+ 107.76 грн
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1000+ 78.56 грн
Мінімальне замовлення: 2
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Технічний опис NVMFWS0D7N04XMT1G onsemi

Description: 40V T10M IN S08FL PACKAGE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 331A (Tc), Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V, Power Dissipation (Max): 134W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 180µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 74.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4657 pF @ 25 V.

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NVMFWS0D7N04XMT1G Виробник : ON Semiconductor nvmfws0d7n04xm-d.pdf Power MOSFET, Single N-Channel
товар відсутній
NVMFWS0D7N04XMT1G NVMFWS0D7N04XMT1G Виробник : onsemi nvmfws0d7n04xm-d.pdf Description: 40V T10M IN S08FL PACKAGE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 331A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 134W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 74.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4657 pF @ 25 V
товар відсутній
NVMFWS0D7N04XMT1G NVMFWS0D7N04XMT1G Виробник : onsemi nvmfws0d7n04xm-d.pdf Description: 40V T10M IN S08FL PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 331A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 134W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 74.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4657 pF @ 25 V
товар відсутній