на замовлення 1500 шт:
термін постачання 224-233 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 134.97 грн |
| 10+ | 110.6 грн |
| 100+ | 76.66 грн |
| 250+ | 70.39 грн |
| 500+ | 64.12 грн |
| 1000+ | 54.99 грн |
| 1500+ | 52.2 грн |
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Технічний опис NVMFS5C645NT1G onsemi
Description: MOSFET N-CH 60V 92A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 92A (Tc), Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 10V, Power Dissipation (Max): 3.7W (Ta), 79W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції NVMFS5C645NT1G
| Фото | Назва | Виробник | Інформація |
Доступність |
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NVMFS5C645NT1G | Виробник : ON Semiconductor |
 NChannel Single Power MOSFET Automotive AEC-Q101 |
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NVMFS5C645NT1G | Виробник : onsemi |
Description: MOSFET N-CH 60V 92A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 92A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 10V Power Dissipation (Max): 3.7W (Ta), 79W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V Qualification: AEC-Q101 |
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NVMFS5C645NT1G | Виробник : onsemi |
Description: MOSFET N-CH 60V 92A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 92A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 10V Power Dissipation (Max): 3.7W (Ta), 79W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V Qualification: AEC-Q101 |
товар відсутній |