NVMFS5C645NLWFAFT1G ONSEMI
Виробник: ONSEMI
Description: ONSEMI - NVMFS5C645NLWFAFT1G - Leistungs-MOSFET, n-Kanal, 60 V, 100 A, 0.0033 ohm, DFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 79W
Bauform - Transistor: DFN
Anzahl der Pins: 5Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0033ohm
SVHC: No SVHC (15-Jan-2018)
Description: ONSEMI - NVMFS5C645NLWFAFT1G - Leistungs-MOSFET, n-Kanal, 60 V, 100 A, 0.0033 ohm, DFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 79W
Bauform - Transistor: DFN
Anzahl der Pins: 5Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0033ohm
SVHC: No SVHC (15-Jan-2018)
на замовлення 2987 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
100+ | 86.94 грн |
500+ | 79.98 грн |
1500+ | 73.14 грн |
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Технічний опис NVMFS5C645NLWFAFT1G ONSEMI
Description: MOSFET N-CH 60V 22A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V, Power Dissipation (Max): 79W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції NVMFS5C645NLWFAFT1G за ціною від 73.14 грн до 222.7 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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NVMFS5C645NLWFAFT1G | Виробник : ONSEMI |
Description: ONSEMI - NVMFS5C645NLWFAFT1G - Leistungs-MOSFET, n-Kanal, 60 V, 100 A, 0.0033 ohm, DFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 79W Bauform - Transistor: DFN Anzahl der Pins: 5Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0033ohm SVHC: No SVHC (15-Jan-2018) |
на замовлення 2987 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C645NLWFAFT1G | Виробник : onsemi |
Description: MOSFET N-CH 60V 22A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1022 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C645NLWFAFT1G | Виробник : onsemi | MOSFETs T6 60V SO8FL |
на замовлення 895 шт: термін постачання 21-30 дні (днів) |
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NVMFS5C645NLWFAFT1G | Виробник : ON Semiconductor | Trans MOSFET N-CH 60V 22A Automotive 5-Pin(4+Tab) SO-FL T/R |
товар відсутній |
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NVMFS5C645NLWFAFT1G | Виробник : onsemi |
Description: MOSFET N-CH 60V 22A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |