на замовлення 1500 шт:
термін постачання 224-233 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 309.02 грн |
10+ | 255.84 грн |
25+ | 209.96 грн |
100+ | 180.06 грн |
250+ | 170.33 грн |
500+ | 159.9 грн |
1000+ | 136.96 грн |
Відгуки про товар
Написати відгук
Технічний опис NVMFS5C612NT1G onsemi
Description: NFET SO8FL 60V 235A 1.5MO, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 225A (Tc), Rds On (Max) @ Id, Vgs: 1.65mOhm @ 50A, 10V, Power Dissipation (Max): 3.8W (Ta), 167W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції NVMFS5C612NT1G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
NVMFS5C612NT1G | Виробник : onsemi |
Description: NFET SO8FL 60V 235A 1.5MO Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 225A (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V Qualification: AEC-Q101 |
товар відсутній |
||
NVMFS5C612NT1G | Виробник : onsemi |
Description: NFET SO8FL 60V 235A 1.5MO Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 225A (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V Qualification: AEC-Q101 |
товар відсутній |