на замовлення 34595 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 145.96 грн |
| 10+ | 113.16 грн |
| 100+ | 82.94 грн |
| 250+ | 80.83 грн |
| 500+ | 70.29 грн |
| 1500+ | 59.74 грн |
| 3000+ | 54.89 грн |
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Технічний опис NVMFD5C466NLT1G onsemi
Description: MOSFET 2N-CH 40V 14A/52A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3W (Ta), 40W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 997pF @ 25V, Rds On (Max) @ Id, Vgs: 7.4mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V, Vgs(th) (Max) @ Id: 2.2V @ 30µA, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual), Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції NVMFD5C466NLT1G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| NVMFD5C466NLT1G | Виробник : ON Semiconductor |
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на замовлення 94 шт: термін постачання 14-28 дні (днів) |
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NVMFD5C466NLT1G | Виробник : onsemi |
Description: MOSFET 2N-CH 40V 14A/52A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 40W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 997pF @ 25V Rds On (Max) @ Id, Vgs: 7.4mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 30µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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NVMFD5C466NLT1G | Виробник : onsemi |
Description: MOSFET 2N-CH 40V 14A/52A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 40W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 997pF @ 25V Rds On (Max) @ Id, Vgs: 7.4mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 30µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |