Технічний опис NVMFD5C446NWFT1G ON Semiconductor
Description: 40V 2.9 MOHM T8 S08FL DUA, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.2W (Ta), 89W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 127A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 25V, Rds On (Max) @ Id, Vgs: 2.9mOhm @ 30A, 10V, Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual).
Інші пропозиції NVMFD5C446NWFT1G
| Фото | Назва | Виробник | Інформація |
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NVMFD5C446NWFT1G | Виробник : ON Semiconductor |
 Trans MOSFET N-CH 40V 24A Automotive AEC-Q101 8-Pin DFN EP T/R |
товар відсутній |
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NVMFD5C446NWFT1G | Виробник : ON Semiconductor |
Trans MOSFET N-CH 40V 24A Automotive 8-Pin DFN EP T/R |
товар відсутній |
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NVMFD5C446NWFT1G | Виробник : onsemi |
Description: 40V 2.9 MOHM T8 S08FL DUA Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.2W (Ta), 89W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 127A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 25V Rds On (Max) @ Id, Vgs: 2.9mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
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NVMFD5C446NWFT1G | Виробник : onsemi |
Description: 40V 2.9 MOHM T8 S08FL DUA Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.2W (Ta), 89W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 127A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 25V Rds On (Max) @ Id, Vgs: 2.9mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
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NVMFD5C446NWFT1G | Виробник : onsemi |
MOSFET 40V 2.9 MOHM T8 SO-8FL DUAL DFN-8 |
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