NVH4L018N075SC1 onsemi
Виробник: onsemi
Description: SIC MOS TO247-4L 750V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 66A, 18V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 22mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 262 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5010 pF @ 375 V
Qualification: AEC-Q101
Description: SIC MOS TO247-4L 750V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 66A, 18V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 22mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 262 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5010 pF @ 375 V
Qualification: AEC-Q101
на замовлення 242 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 2703.91 грн |
30+ | 2182 грн |
120+ | 2036.53 грн |
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Технічний опис NVH4L018N075SC1 onsemi
Description: SIC MOS TO247-4L 750V, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 140A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 66A, 18V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 22mA, Supplier Device Package: TO-247-4L, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 262 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 5010 pF @ 375 V, Qualification: AEC-Q101.
Інші пропозиції NVH4L018N075SC1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
NVH4L018N075SC1 | Виробник : ON Semiconductor | Trans MOSFET N-CH SiC 750V 140A 4-Pin(4+Tab) TO-247 Tube Automotive AEC-Q101 |
товару немає в наявності |