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NVC6S5A354PLZT1G

NVC6S5A354PLZT1G onsemi


nvc6s5a354plz-d.pdf Виробник: onsemi
Description: MOSFET P-CH 60V 4A 6CPH
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 6-CPH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 20 V
Qualification: AEC-Q101
на замовлення 42832 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1350+15.31 грн
Мінімальне замовлення: 1350
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Технічний опис NVC6S5A354PLZT1G onsemi

Description: MOSFET P-CH 60V 4A 6CPH, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V, Power Dissipation (Max): 1.9W (Ta), Vgs(th) (Max) @ Id: 2.6V @ 1mA, Supplier Device Package: 6-CPH, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 20 V, Qualification: AEC-Q101.

Інші пропозиції NVC6S5A354PLZT1G

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
NVC6S5A354PLZT1G NVC6S5A354PLZT1G Виробник : ON Semiconductor NVC6S5A354PLZ-D-1387901.pdf MOSFET PCH 4V DRIVE SERIES
на замовлення 15088 шт:
термін постачання 21-30 дні (днів)
NVC6S5A354PLZT1G Виробник : ON Semiconductor nvc6s5a354plz-d.pdf
на замовлення 2990 шт:
термін постачання 14-28 дні (днів)
NVC6S5A354PLZT1G NVC6S5A354PLZT1G Виробник : onsemi nvc6s5a354plz-d.pdf Description: MOSFET P-CH 60V 4A 6CPH
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 6-CPH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 20 V
Qualification: AEC-Q101
товар відсутній
NVC6S5A354PLZT1G NVC6S5A354PLZT1G Виробник : onsemi nvc6s5a354plz-d.pdf Description: MOSFET P-CH 60V 4A 6CPH
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 6-CPH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 20 V
Qualification: AEC-Q101
товар відсутній