Технічний опис NUR460,133 NXP Semiconductors
Description: DIODE GEN PURP 600V 4A DO201AD, Packaging: Tape & Box (TB), Package / Case: DO-201AD, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 60 ns, Technology: Standard, Current - Average Rectified (Io): 4A, Supplier Device Package: DO-201AD, Operating Temperature - Junction: 150°C (Max), Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A, Current - Reverse Leakage @ Vr: 50 µA @ 600 V.
Інші пропозиції NUR460,133
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
NUR460,133 | Виробник : NXP USA Inc. |
 Description: DIODE GEN PURP 600V 4A DO201ADPackaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: DO-201AD Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
товару немає в наявності |
|
 |
NUR460,133 | Виробник : NXP Semiconductors |
Diodes - General Purpose, Power, Switching Ultra Fast Recovery Diode |
товару немає в наявності |