NTTFS5D9N08HTWG onsemi
Виробник: onsemi
Description: MOSFET N-CH 80V 13A/84A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 84A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 23A, 10V
Power Dissipation (Max): 2.7W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: 8-PQFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 40 V
Description: MOSFET N-CH 80V 13A/84A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 84A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 23A, 10V
Power Dissipation (Max): 2.7W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: 8-PQFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 40 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 61.56 грн |
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Технічний опис NTTFS5D9N08HTWG onsemi
Description: MOSFET N-CH 80V 13A/84A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 84A (Tc), Rds On (Max) @ Id, Vgs: 5.9mOhm @ 23A, 10V, Power Dissipation (Max): 2.7W (Ta), 100W (Tc), Vgs(th) (Max) @ Id: 4V @ 120µA, Supplier Device Package: 8-PQFN (3.3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 40 V.
Інші пропозиції NTTFS5D9N08HTWG за ціною від 56.72 грн до 146.78 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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NTTFS5D9N08HTWG | Виробник : onsemi |
Description: MOSFET N-CH 80V 13A/84A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 84A (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 23A, 10V Power Dissipation (Max): 2.7W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 120µA Supplier Device Package: 8-PQFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 40 V |
на замовлення 3280 шт: термін постачання 21-31 дні (днів) |
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NTTFS5D9N08HTWG | Виробник : onsemi | MOSFETs N-Channel Shielded Gate PowerTrench MOSFET 80 V, 84 A, 5.9 mohm |
на замовлення 117 шт: термін постачання 21-30 дні (днів) |
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NTTFS5D9N08HTWG | Виробник : ON Semiconductor | Trans MOSFET N-CH 80V 13A 8-Pin PQFN EP T/R |
товар відсутній |