NTMTSC4D2N10GTXG onsemi
Виробник: onsemiDescription: 100V MVSOA IN DFNW8(PQFN8X8) PAC
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 178A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 88A, 10V
Power Dissipation (Max): 3.9W (Ta), 267W (Tc)
Vgs(th) (Max) @ Id: 4V @ 450µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10450 pF @ 50 V
на замовлення 2473 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 445.62 грн |
| 10+ | 360.34 грн |
| 100+ | 291.54 грн |
| 500+ | 243.2 грн |
| 1000+ | 208.24 грн |
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Технічний опис NTMTSC4D2N10GTXG onsemi
Description: 100V MVSOA IN DFNW8(PQFN8X8) PAC, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 178A (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 88A, 10V, Power Dissipation (Max): 3.9W (Ta), 267W (Tc), Vgs(th) (Max) @ Id: 4V @ 450µA, Supplier Device Package: 8-TDFNW (8.3x8.4), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10450 pF @ 50 V.
Інші пропозиції NTMTSC4D2N10GTXG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| NTMTSC4D2N10GTXG | Виробник : ON Semiconductor |
MOSFET-Power Single N-Channel |
товар відсутній |
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NTMTSC4D2N10GTXG | Виробник : onsemi |
Description: 100V MVSOA IN DFNW8(PQFN8X8) PAC Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 178A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 88A, 10V Power Dissipation (Max): 3.9W (Ta), 267W (Tc) Vgs(th) (Max) @ Id: 4V @ 450µA Supplier Device Package: 8-TDFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10450 pF @ 50 V |
товар відсутній |
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| NTMTSC4D2N10GTXG | Виробник : onsemi |
MOSFET MOSFET Power, Single N-Channel, DFN8, 100V, 4.2mohm, 178A MOSFET Power, Single N-Channel, DFN8, 100V, 4.2mohm, 178A |
товар відсутній |