NTMTS0D7N04CLTXG onsemi
Виробник: onsemiDescription: MOSFET N-CH 40V 67A/433A 8DFNW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Ta), 433A (Tc)
Rds On (Max) @ Id, Vgs: 0.63mOhm @ 50A, 10V
Power Dissipation (Max): 4.9W (Ta), 205W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12238 pF @ 25 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 505.85 грн |
| 10+ | 417.93 грн |
| 100+ | 348.3 грн |
| 500+ | 288.41 грн |
| 1000+ | 259.57 грн |
Відгуки про товар
Написати відгук
Технічний опис NTMTS0D7N04CLTXG onsemi
Description: MOSFET N-CH 40V 67A/433A 8DFNW, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 67A (Ta), 433A (Tc), Rds On (Max) @ Id, Vgs: 0.63mOhm @ 50A, 10V, Power Dissipation (Max): 4.9W (Ta), 205W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-DFNW (8.3x8.4), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12238 pF @ 25 V.
Інші пропозиції NTMTS0D7N04CLTXG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
|
|
NTMTS0D7N04CLTXG | Виробник : onsemi |
Description: MOSFET N-CH 40V 67A/433A 8DFNW Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 67A (Ta), 433A (Tc) Rds On (Max) @ Id, Vgs: 0.63mOhm @ 50A, 10V Power Dissipation (Max): 4.9W (Ta), 205W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFNW (8.3x8.4) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12238 pF @ 25 V |
товар відсутній |
|
 |
NTMTS0D7N04CLTXG | Виробник : ON Semiconductor |
MOSFET AFSM T6 40V LL NCH |
товар відсутній |