NTMJS1D2N04CLTWG ON Semiconductor


ntmjs1d2n04cl-d.pdf Виробник: ON Semiconductor
Single N Channel Power MOSFET
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис NTMJS1D2N04CLTWG ON Semiconductor

Description: MOSFET N-CH 40V 41A/237A 8LFPAK, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc), Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V, Power Dissipation (Max): 3.8W (Ta), 128W (Tc), Vgs(th) (Max) @ Id: 2V @ 170µA, Supplier Device Package: 8-LFPAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V.

Інші пропозиції NTMJS1D2N04CLTWG

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
NTMJS1D2N04CLTWG NTMJS1D2N04CLTWG Виробник : ON Semiconductor ntmjs1d2n04cl-d.pdf Trans MOSFET N-CH 40V 41A 8-Pin LFPAK EP T/R
товар відсутній
NTMJS1D2N04CLTWG NTMJS1D2N04CLTWG Виробник : onsemi ntmjs1d2n04cl-d.pdf Description: MOSFET N-CH 40V 41A/237A 8LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id: 2V @ 170µA
Supplier Device Package: 8-LFPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
товар відсутній
NTMJS1D2N04CLTWG NTMJS1D2N04CLTWG Виробник : onsemi ntmjs1d2n04cl-d.pdf Description: MOSFET N-CH 40V 41A/237A 8LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id: 2V @ 170µA
Supplier Device Package: 8-LFPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
товар відсутній
NTMJS1D2N04CLTWG NTMJS1D2N04CLTWG Виробник : onsemi NTMJS1D2N04CL_D-2318898.pdf MOSFET T6 40V LL LFPAK
товар відсутній