NTMFWS1D5N08XT1G onsemi
Виробник: onsemiDescription: MOSFET - POWER, SINGLE, N-CHANNE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 253A (Tc)
Rds On (Max) @ Id, Vgs: 1.43mOhm @ 50A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 330µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 40 V
на замовлення 299 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 196.92 грн |
| 10+ | 159.02 грн |
| 100+ | 128.68 грн |
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Технічний опис NTMFWS1D5N08XT1G onsemi
Description: MOSFET - POWER, SINGLE, N-CHANNE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 253A (Tc), Rds On (Max) @ Id, Vgs: 1.43mOhm @ 50A, 10V, Power Dissipation (Max): 194W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 330µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 40 V.
Інші пропозиції NTMFWS1D5N08XT1G за ціною від 94.89 грн до 214.02 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
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NTMFWS1D5N08XT1G | Виробник : onsemi |
MOSFET MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 1.43mohm, 253 A MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 1.43mohm, 253 A |
на замовлення 840 шт: термін постачання 21-30 дні (днів) |
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| NTMFWS1D5N08XT1G | Виробник : ON Semiconductor |
Trans MOSFET N-CH 80V 253A 8-Pin WDFN EP T/R |
товар відсутній |
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NTMFWS1D5N08XT1G | Виробник : onsemi |
Description: MOSFET - POWER, SINGLE, N-CHANNE Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 253A (Tc) Rds On (Max) @ Id, Vgs: 1.43mOhm @ 50A, 10V Power Dissipation (Max): 194W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 330µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 40 V |
товар відсутній |